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Samples of nanographite films obtained by carbon deposition in a methane plasma and subsequent heat treatment at a temperature of 650°C were studied. Thickness of obtained films was 1-2 nm. The results of measurements of a temperature dependencys of the resistance (R(T)) shows that when a temperature changes from 80°K to 300°K the resistance changes by about three orders of magnitude. The temperature dependency of the activation energy has a non-Arrhenius character corresponding to the variable range hopping mechanism. An analysis of the dependency of the reduced activation energy versus the natural logarithm of temperature showed that the electric conductivity of graphite nanoflakes corresponds to the Efros-Shklovsky mechanism. Size of graphite nanoflakes was estimated to be ~1.7 nm from the obtained results.

CONDUCTION MECHANISM OF NANOGRAPHITE FORMED BY METHANE PLASMA DEPOSITION AND SUBSEQUENTLY HEAT TREATMENT