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We report the fabrication of threeand five-layered based TiO2/SiO2 dielectric structures as the back-end reflector application in thin film silicon solar cells. These dielectric structures are prepared by the combined sol-gel and spin-coating techniques. X-ray diffraction (XRD) analysis of both the threeand five-layered based structures confirmed the anatase phase of TiO2 with its dominant peak at 2θ = 25◦. Field-emission scanning electron microscopy (FESEM) study demonstrated the formation of three and five alternate layers of TiO2 and SiO2 films. Comparatively, five-layered based reflector yielded the maximum (100 %) reflectance in the near-infrared (NIR) wavelength region as evidenced by the UV-Vis spectroscopy investigation.

Fabrication and characterization of spectrally selective glazing dielectric multilayer structures