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Vanadium pentoxide (V2O5), a transition metal oxide semiconductor, shows a wide range of applications in thin film form due to its multivalency, layered structure and wide optical band gap [1]. It is a promising compound for smart window applications, but the intercalation process is slow because of its low electrical conductivity and diffusion coefficient of ions [2–7]. Nanoparticle V2O5 thin films are used to overcome this issue by increasing the surface area and decreasing the diffusion distance [8]. In our study, the experimental details for preparing sputtered V2O5−x thin films and the effect of annealing over the prepared thin films were discussed.

Annealing effects on V2O5-x thin films deposited by non reactive sputtering