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Forming ultrashallow junction reduces the source / drain channel length, which improves the CMOS (Complementary metal oxide semiconductor) device performance and the speed of the integrated circuits. Antimony (Sb) of low implant energy 2 keV at implant dose 1 × 10 cm is implanted in conventional silicon wafer (100). Rapid RTA (Thermal annealing technique) is suitable for the asimplanted samples to recover the radiation damaged region and to activate the implanted antimony. This paper investigates the electrical activation of the implanted antimony by estimating its substitutional fraction in the formed ultra junction in silicon wafer by the possibilities of combining the measurements of RBS (Rutherford backscattering spectroscopy) and MEIS (Medium energy ion scattering). It was found that RTA (Rapid thermal annealing) of the as-implanted samples at temperatures ≤ 800 C, the substitutional antimony fraction and the retained dose also are about 90% of the nominal dose. However, annealing at temperatures > 800 C up to 1,100 C antimony precipitate near to the surface and deactivate the electrical conduction by about 50% with increasing the sheet resistance by about 30%.

High Resolution Medium Energy ion Scattering Analysis for Investigating UltraShallow Junction of Antimony Implanted in Conventional Silicon