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Photo-induced changes are investigated in thermally evaporated GexSe1-x (x = 0.28, 0.33 and 0.40) films. Object of studies are fresh (as prepared), as well as annealed films. The studies indicated concentration dependence of the occurring effects for the studied compositions. Fast photo-darkening and slow photo-bleaching processes due to laser irradiation were detected in as-prepared films, while only photo-darkening effect was established for annealed samples. The origin of photo-darkening and photo-bleaching is explained based on the structural investigations carried out by Raman spectroscopy.

Dual Effects of Photo-Darkening and Photo-Bleaching in Ge-Se Films