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Excimer laser crystallization (ELC) is the most commonly employed technology for fabricating low-temperature polycrystalline silicon (LTPS) thin films. The grain size of polycrystalline thin films after ELC is usually determined with a manual calculation, which includes certain disadvantages, i.e., human error and is time-consuming and exhausting. To mitigate these disadvantages, a high-efficiency approach to calculating the grain size of polycrystalline thin films automatically is proposed. It was found that the selected-boundary-definition approach is a promising candidate for calculating the grain size of polycrystalline thin films. The savings in the analysis time is up to 75 %. The average error rate of the measurement can be controlled within 8.33 %.

A reliable approach to a rapid calculation of the grain size of polycrystalline thin films after excimer laser crystallization