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Amorphous and relaxed epitaxial GeSi films are prepared by Ge-implantation into Si(111) wafers of both 60 keV and 200 keV energetic Ge+-ions with appropriate dose, followed by post-implantation thermal annealing, comprising a single final annealing at a temperature of 900 °C. The implantation dose was varied between 10(14) and 10(17) atoms cm-2. Rutherford backscattering (RBS) and channeling analysis was applied in order to explore the formation of a single crystalline Si-Ge compound layer, both prior and after the thermal treatment. The depth and the thickness of the implanted layer, as well as their molar composition and crystalline quality was determined, and it was found that a single crystalline Si-Ge alloy layer was created, with both depth and mole fraction depending on the ion energy and the ion dose

RBS-study of Ge xSi1-x Compounds Formed by Variable Dose Ge Implantation into Si Wafers