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Realizaram-se crescimentos de filmes de diamante por deposição química de vapor (CVD, do inglês Chemical Vapor Deposition) em substratos de silício (100), de grande área (80 cm²), em um reator de filamento quente (HFCVD), com taxas de crescimento superiores a 1,5 µm/h. Foi realizado o crescimento das amostras com diferentes fluxos gasosos e diferentes porcentagens de metano (CH4) em hidrogênio (H2). As amostras foram caracterizadas por microscopia óptica, eletrônica de varredura e por espectroscopia de espalhamento Raman. Tais análises acusaram a presença de diamante de alta pureza em todas as amostras. Diamond films were grown through Chemical Vapor Deposition (CVD) in silicon substrates (100) of large area (80 cm²), in a hot filament chemical vapor deposition (HFCVD), with growth rates over 1,5 µm/h. The growth of samples was made with different gaseous fluxes and different methane percentages (CH4) in hydrogen (H2). The samples were analyzed through optical microscopy, Scanning Electron Microscopy and Raman spectroscopy scattering. Such analyzes showed the presence of a high purity diamond in all samples

Crescimento de diamante CVD em substratos de silício de grande área