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We investigated the effect of adding the field-dependent recombination process, namely field-enhanced trapping, to the generation-recombination processes of charge carriers that model current oscillations in semiconductors. The main new features arising from this modification are identified in bifurcation diagrams with the electric field as the control parameter. The characteristic of the bifurcation diagrams is a function of impurity energy. Thus, we generated a set of bifurcation diagrams for a range of the impurity energy and applied bias. The energy dependence of the bifurcation diagrams is discussed considering the context of the competition between the generation-recombination mechanisms impact ionization and field-enhanced trapping.

Modeling chaotic current oscillations in semi-insulating GaAs with rate-equations of impact ionization and field-enhanced trapping