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By spectroscopically analyzing the light emitted from the tip-sample gap of the scanning tunneling microscope (STM), we have investigated the carrier transport as well as the luminescence properties of AlGaAs/GaAs quantum wells (QW's). The emission intensity form a target well was measured as a function of the tip position on a cleaved (110) surface of the QW structures. The thermalization length and the diffusion length of the injected electrons were determined in real space.

STM light emission spectroscopy of individual quantum wells: measurement of transport parameters in real space