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Este estudo apresenta um método novo para ligar moléculas redox ativas derivadas de ferroceno à superfície de silicone monocristalino. O procedimento consiste na reação de silicone hidrogenado com brometo de alila ativado com luz branca e sua reação subseqüente com monolítio ferroceno para criar uma união covalente entre a molécula redox e a superficie do semicondutor. As camadas formadas são eletroquimicamente ativas e apresentam um processo electroquímico quasi-reversível, atribuído às moléculas de ferroceno ligadas à superfície de silicone. A análise por espectroscopia fotoeletrônica de raios-X (XPS) confirma a presença de moléculas de ferroceno na superficie de silicone. This study presents a new method to bind active redox molecules derived of ferrocene to the surface of single crystal silicon. The procedure consists in the reaction of hydrogenated silicon with allyl bromide activated with white light and its subsequent reaction with monolithio ferrocene in order to create a covalent union between the redox molecule and the semiconductor surface. The layers formed are electrochemically active and present a quasireversible electrochemical process which is attributed to the ferrocene molecules which are bound to the silicon surface. X-ray photoelectron spectroscopy (XPS) analysis confirms the presence of ferrocene molecules on the silicon surface.

Modification of silicon surface with redox molecules derived from ferrocene