English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Recebido em 24/10/2005; Aceito em 24/2/2006The temperature dependence of impurity levels in semiconductors is a very interesting problem in the do-main of deep levels impurities. Its evidence in experimental results is reported by many authors. However, theinterpretation on theoretical basis requires sophisticated models. In this paper we propose a very simple modelthat allows to extract the relevant parameters from the experiment without needing heavy computation.Keywords: bulk semiconductors, impurity levels, thermal properties.O estudo da depend^encia da posi»c~ao dos n¶‡veis de energia das impurezas profundas em semicondutores coma temperatura ¶e um problema bastante interessante, e sua evid^encia experimental ¶e discutida por v¶arios autores.Neste artigo propomos um modelo te¶orico bastante simples, a partir do conhecimento da sec»c~ao de choque defotoioniza»c~ao e de alguns parametros associados aos f¶onons, para o entendimento deste comportamento.Palavras-chave: semicondutores volum¶etricos, impurezas profundas, propriedades t¶ermicas.

Estudo do efeito térmico sobre os níveis de impurezas em semicondutores