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N) to cubic phase (CrN) with the increasing in film thickness, the change in structural transition is attributed to the decrease of film-substrate interfacial strain. From electrical resistivity measurements, the thickness of 150 nm CrN/Si (100) film shown the metal-semiconductor phase transition at around 250 K with energy band gap (E

Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin Films