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We have evaluated the tunneling contact resistivity based on numerical calculation of tunneling current density across an AlGaN barrier layer in non-polar AlGaN/GaN heterostructures. In order to reduce the tunneling contact resistivity, we have introduced an n + -Al x Ga 1-x N layer between an n + -GaN cap layer and an i-AlGaN barrier layer. The tunneling contact resistivity has been optimized by varying Al composition and donor concentration in n + -Al x Ga 1-x N. Simulation results show that the tunneling contact resistivity can be improved by as large as 4 orders of magnitude, compared to the standard AIGaN/GaN heterostructure.

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures