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Interface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 1012 cm−2eV−1, and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO2/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density. key words: SiC, nitride, interface, MIS Schottky

Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode