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Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18 μm CMOS process, and were characterized at 405 nm wavelength for Blu-ray applications. The size of each APD element is 50 × 50 μm2. The dark current was 10 pA at low bias voltage, and low crosstalk of about −80 dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1 A/W at low bias voltage, the responsivity is enhanced to more than 1 A/W at less than 10 V bias voltage due to avalanche amplification. The wide bandwidth of 1.5 GHz was achieved with the responsivity of more than 1 A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system. key words: silicon, photodiode, avalanche photodiode, CMOS, blu-ray

High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region