English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect density, and the assumption is not necessarily valid. In 2016, we proposed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. In this study, we have applied the method to InGaN quantum-well active layers and have estimated the IQE values and their excitation carrier-density dependence in the layers. key words: internal quantum efficiency, recombination, PAS, PL

ieice transactions on electronics

A Novel Method to Measure Absolute Internal Quantum Efficiency in III-Nitride Semiconductors by Simultaneous Photo-Acoustic and Photoluminescence Spectroscopy