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This paper reports dual-polarization In-phase and Quadrature (DP-IQ) modulators and photodetectors integrated with the 90◦ hybrid using InP-based monolithic integration technologies for 100/200 Gb/s coherent transmission. The DP-IQ modulator was monolithically integrated with the Mach-Zehnder modulator array consisting of deep-ridge waveguides formed through dry etching and benzocyclobutene planarization processes. This DP-IQ modulator exhibited the low half-wavelength voltage (Vπ = 1.5 V) and the wide 3-dB bandwidth ( f3dB > 28 GHz). The photodetector monolithically integrated with the 90◦ hybrid consisting of multimode interference structures was realized by the butt-joint regrowth. A responsivity including total loss of 7.9 dB in the waveguide was as high as 0.155 A/W at a wavelength of 1550 nm, and responsivity imbalance of the In-phase and Quadrature channels was less than ±0.5 dB over the C-band. In addition, the low dark current (less than 500 pA up to 85◦C @ −3.0 V) and the stable operation in the accelerated aging test (test condition: −5 V at 175◦C) over 5,000 h were successfully achieved for the p-i-n-photodiode array with a buried heterostructure formed through the selective embedding regrowth. Finally, a receiver responsivity including intrinsic loss of 3 dB in the polarization beam splitter was higher than 0.070 A/W at a wavelength of 1550 nm through the integration of the spot-size converter, and demodulation of 128 Gb/s DP-QPSK and 224 Gb/s DP-16QAM modulated signals was demonstrated for the compact coherent receiver using this photodetector integrated with the 90◦ hybrid. Therefore, we indicated that these InP-based monolithically integrated photonic devices are very useful for 100/200 Gb/s pluggable coherent transceivers. key words: coherent transmission, InP, DP-IQ modulator, 90◦ hybrid, p-i-n photodiode

InP-Based Monolithic Integration Technologies for 100/200Gb/s Pluggable Coherent Transceivers