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In this paper, a numerically investigation of the aperture diameter in intracavity-contacted oxide-confined GaN-based VCSEL is presented. Simulation results show that with increasing of the current aperture diameter, there is a reduction in the differential resistance of the VCSEL. The influence of oxide aperture on the threshold current has also been investigated. There is an enhancement in the threshold current of the VCSEL by increasing the oxide aperture diameter.

The effect of oxide aperture diameter on the electrical characteristics of the GaN-based vertical cavity surface emitting laser