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This paper presents a simple and optimized device layout developed by using diffusion rounding effect for better electrical behavior of transistors. TCAD analysis shows that diffusion rounding at the transistor source side can provide increased I-on with decreased I-off because of the edge effect. The proposed diffusion-rounded CMOS shows as much as 10% improvement in the on-current (driving) and the off-current (leakage) is saved up to 10%. The inverter layout shows that proposed method requires less than a 4% cell area increase for the same driving strength of original cells.open1

Diffusion-rounded CMOS for improving both Ion and Ioff characteristics