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SiC power devices with low loss and fast switching capability have been developing. This study experimentally characterizes trench gate and planar gate SiC MOSFETs, and discusses the difference to conventional Si MOSFET in terms of static and dynamic performance. First, the static current-voltage (I-V) characteristics are evaluated to assess conduction loss. Next, the bias voltage dependencies of terminal capacitance (C-V) are characterized to clarify differences stemming from device configuration. Turn-off switchings for non-inductive resistive loads are examined, and the result are evaluated by associating measured C-V characteristics.

Comparative study of the static and switching characteristics of SiC and Si MOSFETs