English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Transient behavior in switching operation of junction field-effect transistors (JFETs) is affected by their intrinsic parasitic capacitances. This paper focuses on the switching operation of lateral-type and vertical-type SiC JFETs with considering the charge/discharge behavior of parasitic capacitances in the device. Their device structure decides the voltage dependency of the capacitance characteristics, so that the C-V characteristics governs their switching behavior.

Switching characteristics of lateral-type and vertical-type SiC JFETs depending on their internal parasitic capacitances