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An analytical approach is presented to investigate the performance of matrix amplifiers containing both hetero-junction bipolar and high-electron-mobility transistors. An analytical relation for attenuation function of the central line of the matrix amplifier is developed which can be employed in the consideration of the influence of several parameters on the device performance. It is shown that this structure may have lower attenuation respect to the traditional HEMT_HEMT and HEMT_HBT matrix amplifiers. The proposed technique is applicable in improving the performance of Microwave and mm-wave ICs.

Study the influence of transmission line loss on the performance of matrix amplifiers