English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Electron backscatter diffraction (EBSD) technique has been applied to the strain distribution measurements for GaN based heterostructures for the first time. From the results for the simple AlGaN/GaN structures on GaN substrates, it was confirmed that this method has high spatial resolution of about 80nm and gives quantitatively reasonable strain values. The EBSD technique was then applied to the heterostructures grown on Si substrates to study the role of an AlN/GaN multilayer prior to the growth of a thick GaN layer. It was clarified that there exists a compressive strain in the GaN layer, especially near the interface to the AlN/GaN multilayer. This compressive strain will be relevant to the suppression of the crack generation in the thick GaN layer.

Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique