English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Tunneling Dielectric Thin-Film Transistor (TDTFT), which was proposed to reduce the gate-off current by utilizing a tunneling effect, was fabricated in a bottom-gate structure. For the tunneling dielectric, a 1.7-nm-thick SiNx film was deposited onto the source and drain by a low-pressure chemical vapor deposition (LPCVD) method. The gate-off current of the TDTFT was reduced less than 1/10 in comparison with a conventional TFT. Although the subthreshold characteristics and the gm were degraded due to the tunnel resistance, it will be compensated by further thinning of SiNx film or using the material with the barrier height lower than SiNx.

Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain