English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A novel high voltage diode featuring partial n+ adjusting region embedded at the anode side is proposed and analyzed by device simulation in this paper. The low and inverted on-state carrier profile is obtained to realize the fast and soft recovery behavior. The simulations show that the proposed diode achieves a 21% reduction in the reverse peak current density compared with the conventional diode. What’s more, such partial n+ adjusting region results in the parasitic npn transistor triggered during reverse recovery, and electrons are injected into the pn− junction to inhibit the peak electric field, improving the dynamic ruggedness.

A high voltage diode with partial n+ adjusting region embedded at the anode side

A high voltage diode with partial n⁺ adjusting region embedded at the anode side