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A base resistance controlled thyristor with semi-superjunction (Semi-SJ BRT) is proposed in this paper. The highly doped P-pillar in drift region extracts injected holes into thyristor, then hole current density in thyristor will be improved and parasitic transistor is significantly suppressed. Meanwhile, highly doped drift region reduces drift resistance, then thyristor trigger current is enhanced. Snapback is greatly suppressed. In addition, much more minority carriers will be extracted due to charge coupling effect in drift region. Turn-off loss is reduced and trade-off performance is improved. Numerical simulation results show that, when the pillar doping level is higher than 1.0 × 1015 cm−3, snapback-free can be realized and turn-off loss can be reduced by 22.28%.

A new snapback-free base resistance controlled thyristor with semi-superjunction