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Nanoscale tri-gate SOI MOSFETs attract much attention in terms of the significance of self-heating effects (SHEs) which severely influence the operation stability and device reliability. Here, the impacts of the heat loss paths associated with the SHEs in nanoscale tri-gate SOI MOSFETs are comprehensively analyzed considering the gate dissipation channels (GDCs). The thermal resistance network model and thermal resistance model are presented to illustrate the heat dissipation mechanisms. 3D electro-thermal TCAD simulation results show that the heat flux through the GDCs occupies most part of the total heat dissipation. The static peak temperature can be decreased by decreasing the gate oxide thickness and increasing the crosssection of Fin area of tri-gate devices.

The impact of heat loss paths on the electrothermal models of self-heating effects in nanoscale tri-gate SOI MOSFETs