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This paper presents a fully integrated power amplifier (PA) using parallel-combined transistors with a cascode adaptive biasing, implemented in a standard 65 nm CMOS process. The parallel-combined transistors in the common-source stage linearizes the effective gm. In addition, adaptive bias circuits are applied to both the common-source and common-gate stages to provide optimum operation conditions to each transistor, according to the output power variations. When the fully integrated PA was tested with a modulation and coding scheme 7 (MCS7) 802.11n signal, it meets a −28 dB error vector magnitude and spectral mask requirements at 18.4 dBm of average output power, with a power-added efficiency of 13.1%.

A 5.5-GHz CMOS power amplifier using parallel-combined transistors with cascode adaptive biasing for WLAN applications