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In this paper, the impacts of total dose radiation on the lowfrequency noise and gate induced floating body effects (GIFBEs) for the 130 nm partially depleted silicon-on-insulator N-type metal-oxide semiconductors transistor with an ultrathin gate oxide have been investigated. It is shown that the second transconductance gm peak becomes smaller after irradiation when the Lorentzian-like excess noise is more pronounced. The traps induced by irradiation at shallow trench isolation/body and buriedoxide/body interface can act as the recombination centers to increase the source-body diode current, which results in the changes in the excess noise and GIFBEs.

Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide