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Coaxial through silicon via (TSV) is a promising technology in three dimensional integrated circuits (3D ICs). Conventional coaxial TSV offers shield around part of the TSV in silicon substrate leave the two ends of TSV and the whole pad without any shield. This paper reports a new coaxial TSV, which offers more shields around TSV and pad with gaps for interconnection. Furthermore, the new structure is more feasible by using double dielectrics with considering deformation and process error. The full-wave extraction simulation result shows that the new structure offers less coupling with adjacent TSVs than conventional coaxial TSV structure does. The losses of new structure is lager but can be reduced by increasing the thickness of gap.

New coaxial through silicon via (TSV) applied for three dimensional integrated circuits (3D ICs)