English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

70-nm T-gate InP-based low noise In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistor (PHEMT) with well-balanced cutoff frequency ft and maximum oscillation frequency fmax were designed and fabricated. DC, RF, and noise characterizations are demonstrated. The maximum saturation current density Idss and maximum extrinsic transconductance gm,max are measured to be 894mA/mm and 1640mS/mm, respectively. And the extrapolated ft and fmax based on inflection point were 247GHz and 392GHz, respectively. Due to the disadvantages of traditionally used Y-factor method, the new cold-source method was adopted to measure the noise parameters. The minimum noise figure (NFmin) is 1 dB at 30GHz associated with a gain of 15 dB at Vds of 0.8V and Ids of 17mA. These excellent results make this InP-based PHEMT one of the most suitable devices for millimeter wave low noise applications.

Realization of 70-nm T-gate InP-based PHEMT for MMW low noise applications