English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A V-band low-noise amplifier with the gain boosting and noise reduction technique in 90 nm LP CMOS is implemented and tested in this paper. The operation principles of the two techniques are analyzed in detail. The fabricated LNA has a peak gain of 19.8 dB, 3-dB bandwidth of 10.5 GHz and NF of 5.86 dB at 61.5GHz. Additionally, the reverse isolation of this LNA is better than 50 dB at all frequency. The input and output return losses are both below −10 dB in the China’s 60GHz unlicensed band (59–64GHz). The total chip size is 0.36mm2 including testing pads.

Analysis and design of a V-band low-noise amplifier in 90 nm CMOS for 60 GHz applications