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The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has pand n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8Gb/s.

Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure