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BiNbOx (BNO) thin films fabricated by a chemical solution deposition (CSD) under annealing conditions of 550°C and 20min were found to exhibit an unprecedentedly high relative dielectric constant of 170, which is substantially greater than that of sputtered BNO films. Transmission electron microscopy analysis showed that the BNO film fabricated by CSD had two crysalline phases, O-BiNbO4, cubic pyrochlore, along with amorphous regions. In contrast, the BNO film deposited by sputtering consists of Bi3NbO7 crystallites and amorphous regions and no cubic pyrochlore phase was found. The presence of the pyrochlore crystallites explains unprecedentedly high relative dielectric constant observed in CSD-derived BNO films.

Observation of high dielectric constant of Bi-Nb-O<sub>x</sub> thin-film capacitors fabricated by chemical solution deposition process