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A novel layout structure for the typical 6T-SRAM cell is designed to mitigate the single-event induced MBU. And three-dimensional technology computer-aided design (TCAD) numerical simulation is used to evaluate the MBU hardening performance of this novel layout structure. Compared to other layout structures, our proposed layout can effectively attenuate the single-event induced MBU in typical 6TSRAM with little area and power penalty.

A novel layout placement structure to mitigate the multi-bit-upset in 6T-SRAM cell