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A compact quadrature coupler — using intertwined mutual inductors by the proposed GaAs integrated passive device (IPD) process — is developed by considering the quality factor of inductor and minimum insertion loss for the long term evolution (LTE) applications. At the center frequency of LTE bands 5 and 8, the quadrature coupler achieved 3.45 dB of insertion loss S21 and 3.43 dB of coupling S41 with less than 0.65 degrees of phase error over the frequency range. The reflection coefficient S11 and the isolation S31 are 24.32 dB and 23.45 dB, respectively. This coupler can be usable for a compact quadrature 3-dB divider/combiner as partial component of a balanced power amplifier.

A compact quadrature coupler on GaAs IPD process for LTE applications