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which assigned to the (002) plane of hexagonal structure. It was found that the intensity of diffraction peak (002) increases with a decrease of the substrate temperature. Average grain size calculated from XRD results is about 30 nm and weakly depends on the substrate temperature. After 30min annealing at 400 0 C the intensity of (002) peaks increased considerably and at the same time average grain size growth only on 5-10%. Profiler and AFM results have shown that the roughness and morphology of the CdS thin film surfaces vary insignificantly with the variation of substrate and annealing temperature. The transmission and reflection spectrum of CdS thin films measured in the range 400–1000nm. Optical measurements have shown that the films deposited at substrate temperatures of 200 0 C and 300 0 C have bandgap 2.42eV which corresponds to the bandgap of bulk CdS crystal. After annealing the bandgap values were changed negligible.

Substrate temperature and annealing effects on the structural and optical properties of nano-Cds films deposited by vacuum flash evaporation technique