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In this work, an III-V tunneling field-effect transistor (TFET) with source and channel heterojunctions is proposed and introduced. Proposed structure combine the high tunneling efficiency induced by heterojunction material and the high mobility of III-V material. The III-V TFETs based on either source heterojunction and channel heterojunctions have been intensively researched due to their excellent subthreshold-swing characteristics. However, compared with conventional III-V TFETs, the III-V TFETs with source and channel heterojunctions have both shorter tunneling distance and two transmission resonances that significantly improve the on-current. The transfer characteristics affected by gate length were also evaluated. The results show that on-current, off-current, and on-current/off-current ratio and subthreshold-swing of III-V TFETs with source and channel heterojunctions are about 10-3 A/μm, 10-13 A/μm, 10-10 and 30 mV/decade, respectively.

Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction