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In this study, capacitance and conductance methods were used to investigate the charge traps at a HfO2/(100)InGaAs interface with an atomic layer deposition HfO2 layer doped with Al2O3 by co-deposition technique. The effect of Al doping on the quality of the HfO2/In0.53Ga0.47As interface will be evaluated. The density of interface traps (Dit) near In0.53Ga0.47As midgap is close to 2×10 12 cm −2 eV −1 . Based on comparison to the HfO2/In0.53Ga0.47As interface without Al2O3 interfacial passivation where the value Dit∼10 13 cm −2 eV −1 is encountered near the midgap, we can conclude that the presence of Al2O3 passivation noticeably improves the interface quality.

INVESTIGATION OF CHARGE TRAPS AT Al-DOPED HfO2/(100)InGaAs INTERFACE BY USING CAPACITANCE AND CONDUCTANCE METHODS