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We demonstrate that a two-colour three-pulse nonlinear spectroscopy can be used to study the dynamics of excited carriers in Si quantum dot structures embedded in SiN. Decays of the transverse optical phonon population and the transverse acoustic phonon population are measured and discussed. A theoretical simulation is also performed to support interpretation of our experimental observations.

Two-colour Three-pulse Spectrally Resolved Nonlinear Spectroscopy for Studies of Dynamics in Semiconductor Si Quantum Dots