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The confinement of the modern day semiconductor dev ices is fast propelling the growth of nanoparticles as an excellent constituent of such device and the characteristics like quantum si ze confinement and coulomb blockade effect of the sis accelerating their application in this field. But before the fabrication of devices with the nanoparticles, their morphol ogical and electrical characteristics needs to be studied in order to hav e a sense about the efficiency of such a device. In this experiment, Silicon nanoparticles have been deposited on SiO 2 substrate by thermal decomposition of silane using Low Pressure Chemical Vapor Deposition (LPCVD) Method with varying deposition t imes. Then, the morphology of the sample, the size as well as distribution of the nanoparticles is investigated using Atomic Force Mi croscopy (AFM) and the Scanning Probe Image Process or (SPIP). It shows that all the characteristics of the nanoparticles like h eight, density and size of the nanoparticles change with the varying deposition time. The size of the nanoparticles varied between 2-10nm whereas the height and density varied between 1-3n m and 2X10 11 /cm 2 3.5X10 11 /cm 2 respectively.

SYNTHESIS AND MORPHOLOGY OF SILICON NANOPARTICLES BY DEPOSITION TIME VARYING LPCVD METHOD TO DEMONSTRATE THE VARIATION OF HEIGHT, DENSITY AND SIZE