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We establish that the phenomenon of transient negative capacitance, conventionally linked to the delay in the response of a domain switching, of a ferroelectric material, and modelled by a non-linear capacitor, can in fact be considered to be more generally applicable to any phenomenon that can be represented by an RC-equivalent circuit. We demonstrate the conditions for sub-60 mV/dec switching in an RC-FET, even if the  R  and  C  were constant along both forward and backward sweeps. For semiconductor charge  Q  ch , we show that the necessary condition for sub-60 mV/dec switching (d Q  ch )/(d Ψ  s ) = ( q /( k   B   T )) Q  ch , where  Ψ  s  is the surface potential, is possible only if  Q  ch  &gt; 0 (i.e. when the transistor is ON) during the backward sweep. This insight contributes further understanding on the causes of hysteresis in commonly used SPICE models of FE-FETs. Graphic abstract

Necessary conditions for steep switching in a constant Resistor-Capacitor RCFET