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Understanding of semiconductor breakdown under high electric fields is an important aspect of materials’ properties, particularly for the design of power devices. For decades, a power-law has been used to describe the dependence of material-specific critical electrical field (   $${\mathcal{E}}_{\text{crit}}$$  E crit ) at which the material breaks down and bandgap ( E   g  ) .  The relationship is often used to gauge tradeoffs of emerging materials whose properties haven’t yet been determined. Unfortunately, the reported dependencies of    $${\mathcal{E}}_{\text{crit}}$$  E crit on  E   g   cover a surprisingly wide range in the literature. Moreover,    $${\mathcal{E}}_{\text{crit}}$$  E crit is a function of material doping. Further, discrepancies arise in    $${\mathcal{E}}_{\text{crit}}$$  E crit values owing to differences between punch-through and non-punch-through device structures. We report a new normalization procedure that enables comparison of critical electric field values across materials, doping, and different device types. An extensive examination of numerous references reveals that the dependence    $${\mathcal{E}}_{\text{crit}}$$  E crit ∝  E   g   1.83  best fits the most reliable and newest data for both direct and indirect semiconductors. Graphical abstract

Analysis of the dependence of critical electric field on semiconductor bandgap