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The effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl 2 /Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being ∼ 500 Å. Post-etch annealing was found to partially restore the diode characteristics.

High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges

High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl₂/Ar Discharges