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GaN/sapphire layers have been grown by Metal Organic Vapour Phase Epitaxy (MOVPE). An amorphous silicon nitride layer is deposited using a SiH 4 /NH 3 mixture prior to the growth of the low temperature GaN buffer layer. Such a process induces a 3D nucleation at the early beginning of the growth, resulting in a kind of maskless ELO process with random opening sizes. This produces a significant decrease of the threading dislocation (TD) density compared to the best GaN/sapphire templates. Ultra Low Dislocation density (ULD) GaN layers were obtained with TD density as low as 7×10 7 cm −2 as measured by atomic force microscopy (AFM), cathodoluminescence and transmission electron microscopy (TEM). Time-resolved photoluminescence experiments show that the lifetime of the A free exciton is principally limited by capture onto residual donors, similar to the situation for nearly dislocation-free homoepitaxial layers.

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy