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Here, we report a detailed method of growing LaAlGe, a non-magnetic Weylsemimetal, thin film on silicon(100) substrates by molecular beam epitaxy andtheir structural and electrical characterizations. 50 nm thick LaAlGe filmswere deposited and annealed for 16 hours in situ at a temperature 793 K.As-grown high-quality films showed uniform surface topography and near idealstoichiometry with a body-centered tetragonal crystal structure.Temperature-dependent longitudinal resistivity can be understood with dominantinterband s-d electron-phonon scattering in the temperature range 5-40 K. Hallmeasurements confirmed the semimetallic nature of the films with electrondominated charge carrier density near 7.15*10^21 cm^-3 at 5 K.

Molecular beam epitaxy growth of nonmagnetic Weyl semimetal LaAlGe thin film