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This work reports the growth of crystalline SrHf x Ti 1 −x O 3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile ( x = 0) to compressive ( x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225 °C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from ~530 °C ( x = 0) to ~660 °C ( x = 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm 2 leakage current at 1 MV/cm for x = 0.55.

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3