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This work reports an investigation of electron transport in monoclinic\beta-Ga2O3 based on a combination of density functional perturbation theorybased lattice dynamical computations, coupling calculation of lattice modeswith collective plasmon oscillations and Boltzmann theory based transportcalculations. The strong entanglement of the plasmon with the differentlongitudinal optical (LO) modes make the role LO-plasmon coupling crucial fortransport. The electron density dependence of the electron mobility in\beta-Ga2O3 is studied in bulk material form and also in the form oftwo-dimensional electron gas. Under high electron density a bulk mobility of182 cm2/ V.s is predicted while in 2DEG form the corresponding mobility isabout 418 cm2/V.s when remote impurities are present at the interface andimproves further as the remote impurity center moves away from the interface.The trend of the electron mobility shows promise for realizing high electronmobility in dopant isolated electron channels. The experimentally observedsmall anisotropy in mobility is traced through a transient Monte Carlosimulation. It is found that the anisotropy of the IR active phonon modes isresponsible for giving rise to the anisotropy in low-field electron mobility.

Electron Mobility in Monoclinic \beta-Ga2O3 - Effect of Plasmon-phonon Coupling, Anisotropy, and Confinement