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A special type of epitaxial growth appears during solid phase thin film reactions, where\udthe reaction product grows epitaxially on the substrate. Some metal silicide layers and\udnanostructures are known to develop such epitaxial structures. In this study iron silicide\udwas used to study the effect of the growth mode on the epitaxial growth. Strain-induced,\udself-assembled iron silicide nanostructures were grown on Si(001) substrates by electron\udgun evaporation of 1.0 nm iron and subsequent annealing at 500-850°C for 60 minutes. The\udgrowth processes were checked by reflection high energy electron diffraction, and the formed structures were characterized by scanning electron microscopy and optical\udmicroscopy. The iron silicide nanostructures were oriented in square directions epitaxially\udfitting to the surface of Si(001). The shape and size of the nanostructures depended on the\udannealing temperature. In some cases the nanoparticles were arranged in circles. This might\udbe the direct consequence of a nucleation controlled type transition of iron monosilicide to\udiron disilicide phase at nanoscale

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)